By Xavier Aragonès, José Luis González, Antonio Rubio (auth.)
Modern microelectronic layout is characterised through the mixing of complete structures on a unmarried die. those structures frequently comprise huge excessive functionality electronic circuitry, excessive solution analog elements, excessive riding I/O, and perhaps RF sections. Designers of such platforms are always confronted with the problem to accomplish compatibility in electric features of each part: a few circuitry offers speedy transients and massive intake spikes, while others require quiet environments to accomplish resolutions way past millivolts. Coupling among these sections is mostly unavoidable, because the whole procedure stocks an analogous silicon substrate bulk and a similar package deal. knowing the way in which coupling is produced, and figuring out how to isolate coupled circuitry, and the way to use each technique, is then vital wisdom for each IC dressmaker.
Analysis and strategies for Switching Noise Coupling in Mixed-SignalICs is an in-depth examine coupling in the course of the universal silicon substrate, and noise on the energy offer strains. It explains the hassle-free wisdom had to comprehend those phenomena and provides a evaluate of earlier works and new examine effects. the purpose is to supply an realizing of the explanations for those specific methods of coupling, evaluate and recommend ideas to noise coupling, and supply standards to use noise relief.
Analysis and strategies for Switching Noise Coupling in Mixed-SignalICs is a perfect ebook, either as introductory fabric to noise-coupling difficulties in mixed-signal ICs, and for extra complicated designers dealing with this problem.
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Extra resources for Analysis and Solutions for Switching Noise Coupling in Mixed-Signal ICs
38 CHAPTER 2. SUBSTRATE NOlSE CHARACTERlSTlCS AND PROPAGATION As a methodology, we will take a reference situation, and alter geometrical parameters to observe their effects. The situation taken as a reference is a silicon fragment 300 11m long (x dimension), 200 11m wide (y dimension), and 50 11m thick (z dimension). A small electrode is placed at one of the ends (x=O 11m), biased to 1 V. This electrode will stand for a noisy node, and its voltage will be taken as a reference of the amount of noise injected, which is attenuated along the substrate.
M. Young, K. ßrehmer, "Effect of Substrate Material in Mixed Analog/Digital Integrated Circuits", Proc. IEEE International Electron Devices Meeting, pp. 433-436, San Francisco, December 1994.  MEDICI, a Mo dimensional device simulator program, Technology Modeling Assoeiated, Ine. (TMAl, Palo Alto, CA, 1993. 50 CHAPTER 2. J. A. Wooley, "Experimental Results and Modeling Techniques for Substrate Noise in Mixed-Signal Integrated Circuits", SYlllposium on VLSI Circuits Digest o! Technical Papers, pp.
In all cases, the larger the ring, the lower the noise. lm add little noise reduction, while in P+ wafers the noise reduction is practically linear with the ring length. This confirms what was previously stated about the influence of contacts on noise propagation. In P+ substrates noise is not attenuated with distance, and its level depends on the total area of the contacts, regardless of their location -talking about guard rings will be meaningless-. On the contrary, if noise is attenuated with distance, as in P- wafers especially if they have a backplane, the disturbance is greatest on the straight line joining the noisy and the sensitive points, and the further the contacts from this line, the lower their effecti veness.
Analysis and Solutions for Switching Noise Coupling in Mixed-Signal ICs by Xavier Aragonès, José Luis González, Antonio Rubio (auth.)