Read e-book online Defects in semiconductors PDF

By Lucia Romano, Vittorio Privitera, Chennupati Jagadish

ISBN-10: 0128019352

ISBN-13: 9780128019351

ISBN-10: 0128019409

ISBN-13: 9780128019405

This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, makes a speciality of defects in semiconductors. Defects in semiconductors support to provide an explanation for numerous phenomena, from diffusion to getter, and to attract theories on fabrics' habit in accordance with electric or mechanical fields.

The quantity comprises chapters focusing particularly on electron and proton irradiation of silicon, element defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and masses extra. it is going to aid help scholars and scientists of their experimental and theoretical paths.

  • Expert contributors
  • Reviews of an important contemporary literature
  • Clear illustrations
  • A extensive view, together with exam of defects in several semiconductors

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Additional resources for Defects in semiconductors

Example text

1999. Dopants in silicon. In: Hull, R. ), Properties of Crystalline Silicon. EMIS Datareviews Series, vol. 20. INSPEC, London (Chapter 10). , 2004. Effect of near-surface band bending on dopant profiles in ion-implanted silicon. J. Appl. Phys. 95, 1134–1140. , 2012. Precipitation of antimony implanted into silicon. ECS Trans. 41 (34), 9–17. , 1984. Protonstimulated diffusion of antimony in silicon. Sov. Phys. Semicond. 18 (5), 598–599. , 1985. Diffusion of a substitutional impurity in a crystal irradiated with ions.

Observation of oxidation-enhanced and -retarded diffusion of antimony in silicon: the behavior of (111) wafers. W. ), Defects in Semiconductors II. Mat. Res. Soc. Symp. Proc, vol. 14. pp. 141–145. , 1989. Theoretical model for selfinterstitial generation at the Si/SiO2 interface during thermal oxidation of silicon. J. Appl. Phys. 65, 2723–2727. , 1969. Shallow phosphorus diffusion profiles in silicon. Proc. IEEE 57, 1499–1506. , 1983. Diffusion. M. ), VLSI Technology. McGraw-Hill, New York, NY, pp.

1. It appears that for all energies between 1 keV and 10 MeV the electronic stopping power is significantly larger than the nuclear stopping power, and even for a proton energy of 1 keV the stopping process in silicon will be accompanied by the creation of a large number of electron–hole pairs.

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Defects in semiconductors by Lucia Romano, Vittorio Privitera, Chennupati Jagadish


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